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Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

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5 Author(s)
Chyiu Hyia Poon ; Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory and Laser Micro-Processing Laboratory, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 ; Jin Cho, Byung ; Lu, Yong Feng ; Bhat, Mousumi
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Advantages of multiple-pulse laser annealing with a moderate energy fluence over a single-pulse annealing with a high energy fluence are demonstrated on the formation of shallow p+/n junction. When the silicon surface is preamorphized, the multiple-pulse laser annealing with a fluence adjusted to a value which can melt the amorphous layer but not crystal silicon shows that the successive pulses do not increase junction depth further but decrease sheet resistance significantly. Under this condition, the junction depth is still controlled by the depth of the preamorphized layer. However, when the laser fluence is high enough to melt the crystal silicon, the successive pulses result in the deepening of junction depth. This is attributed to the increase of surface roughness by the successive pulses, thereby increasing the total absorbed energy. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 2 )