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Electron beam projection lithography (EPL) has been developed as one of the most promising candidates for the next generation lithography below 70 nm node devices. Stencil masks, which are used in the EPL technology as masks, have brought new necessities of data conversion such as dividing the data into two complementary masks. The patterns have to be divided and dispatched optimally onto each of the complementary masks in order to make the stencil masks manufacturable. We have developed a data conversion system for EPL, called “EPLON.” EPLON provides a solution to the problems mentioned and converts the data available on EPL. In this article, our method of converting the complementary mask data is presented. © 2002 American Vacuum Society.