Cart (Loading....) | Create Account
Close category search window
 

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Ban, D. ; Edward S. Rogers Sr. Department of Electrical and Computer Engineering, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canada ; Sargent, E.H. ; Dixon-Warren, St.J. ; Grevatt, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1511211 

We report results of a scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) study of the distribution of charge carriers inside multi-quantum-well (MQW) buried heterostructure (BH) lasers. We demonstrate that individual quantum-well–barrier layers can be resolved using high-resolution SSRM. Calibrated SSRM and SCM measurements were performed on the MQW BH laser structure, by utilizing known InP dopant staircase samples to calibrate the instrumentation. Doping concentrations derived from SSRM and SCM measurements were compared with the nominal values of both p- and n-doped regions in the MQW BH lasers. For n-type materials, the accuracy was bias dependent with SSRM, while for SCM, excellent quantitative agreement between measured and nominal dopant values was obtained. The SSRM was able to measure the dopant concentration in the p-type materials with ∼30% accuracy, but quantitative measurements could not be obtained with the SCM. Our results demonstrate the utility of combining calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional devices such as MQW BH lasers, in which traditional one-dimensional probing using secondary ion mass spectroscopy provides only a partial picture of internal device structure. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 5 )

Date of Publication:

Sep 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.