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Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

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3 Author(s)
Brown, Terence ; Georgia Institute of Technology, Atlanta, Georgia 30332-0250 ; Brown, April ; May, Gary

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High-resolution x-ray diffraction was used to characterize and compare the exchange process at the interfaces of mixed anion heterostructures. Superlattices (SLs) formed by the Sb2 exposure of As-stabilized GaAs surfaces and the As4 exposure of Sb-stabilized GaSb surfaces were grown by molecular beam epitaxy and characterized. Interface composition profiles have been determined using full dynamical simulations of the SL structures that exhibited anion exchange. Comparisons between As-for-Sb exchange on GaSb and Sb-for-As exchange on GaAs are presented in order to better understand the chemical and physical processes that lead to anion exchange. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 4 )

Date of Publication:

Jul 2002

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