Cart (Loading....) | Create Account
Close category search window

Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Nakajima, Anri ; Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan ; Khosru, Q.D.M. ; Yoshimoto, Takashi ; Kidera, Toshirou
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Thin (equivalent oxide thickness Teq of 2.4 nm) silicon nitride was deposited on Si substrates by atomic-layer deposition (ALD) at low temperatures (≪550 °C). Substantial enhancement of reliability was obtained with respect to the conventional SiO2 samples. An exciting feature of suppressed soft breakdown events was observed. Injected-carrier-induced physical damage, which results in the formation of the conductive filaments at the poly-Si/ALD-Si-nitride and ALD-Si-nitride/Si-substrate interfaces, is suppressed due to the higher stability of the Si–N bonds than that of the strained Si–O bonds. This suppression of physical damage leads to enhanced reliability. Therefore, the ALD silicon nitride can be a good choice for a highly reliable ultrathin gate dielectric in deep submicron complementary metal–oxide–semiconductor technology. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 4 )

Date of Publication:

Jul 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.