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Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers

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4 Author(s)
Kim, Eui-Tae ; Nanostructure Materials and Devices Laboratory, Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241 ; Chen, Zhonghui ; Ho, Max ; Madhukar, Anupam

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We report on the tailoring of detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1-xAs capping layers and on the realization of voltage-tunable two-color QDIPs for mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) detection. QDIPs having 2.0 ML InAs QDs capped by 20 ML In0.15Ga0.85As layer show bias-dependent photocurrent peak positions in the LWIR regime (∼8–9 μm) which are redshifted with respect to those (∼5–7 μm) in the counterpart QDIPs without InxGa1-xAs capping layers. QDIPs having 2.5 ML InAs QDs capped by a 30 ML In0.15Ga0.85As layer have a bimodal QD size distribution and show voltage-tunable MWIR (∼5.5–6 μm) and LWIR (∼9–11 μm) photoresponse. At low bias, MWIR photoresponse is dominant whereas with increasing bias, the LWIR photoresponse becomes dominant. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

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