Cart (Loading....) | Create Account
Close category search window

Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Sigmund, J. ; Institut für Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany ; Saglam, M. ; Hartnagel, H.L. ; Zverev, V.N.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated the electron transport properties and the atomic morphology of AlSb/InAs/AlSb quantum wells (QW) grown by molecular-beam epitaxy. Different shutter sequences were used in producing an InSb-like interface. The highest mobility was obtained for a QW width of 15 nm and an InSb-like interface grown by two growth interruptions, one before and one after the deposition of one indium monolayer. For this shutter sequence, several samples with an InAs channel width from 6 to 25 nm were grown and characterized using high-resolution transmission electron microscopy, classical, and quantum Hall measurements. For a channel width less than 15 nm, the interface roughness becomes dominant, leading to a sharp decrease in the electron mobility. The electron effective mass determined by the temperature dependence of the Shubnikov–de Haas oscillazion amplitude is 0.0374m0. Transmission electron microscopy images show an atomically abrupt interface and disordered regions directly above the AlSb/InAs interface which can be as large as 2.4 nm. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.