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Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions

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8 Author(s)
Sigmund, J. ; Institut für Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany ; Saglam, M. ; Hartnagel, H.L. ; Zverev, V.N.
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We have investigated the electron transport properties and the atomic morphology of AlSb/InAs/AlSb quantum wells (QW) grown by molecular-beam epitaxy. Different shutter sequences were used in producing an InSb-like interface. The highest mobility was obtained for a QW width of 15 nm and an InSb-like interface grown by two growth interruptions, one before and one after the deposition of one indium monolayer. For this shutter sequence, several samples with an InAs channel width from 6 to 25 nm were grown and characterized using high-resolution transmission electron microscopy, classical, and quantum Hall measurements. For a channel width less than 15 nm, the interface roughness becomes dominant, leading to a sharp decrease in the electron mobility. The electron effective mass determined by the temperature dependence of the Shubnikov–de Haas oscillazion amplitude is 0.0374m0. Transmission electron microscopy images show an atomically abrupt interface and disordered regions directly above the AlSb/InAs interface which can be as large as 2.4 nm. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

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