Cart (Loading....) | Create Account
Close category search window

Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Calawa, S.D. ; MIT Lincoln Laboratory, Lexington, Massachusetts 02420-9108 ; Burke, B.E. ; Nitishin, P.M. ; Loomis, A.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Silicon charge-coupled devices (CCDs) are extensively used for commercial and scientific imaging in the visible to near-infrared wavelength range of 450 to 850 nm. Ground-based astronomers require large-scale high-performance CCDs with high sensitivity at wavelengths from the 320 nm atmospheric cutoff to 900 nm. We report on wafer-scale low-temperature silicon molecular beam epitaxy to enable ultraviolet (UV) detection utilizing silicon-fabrication-facility-compatible surface preparation. Characterization of the UV response-enhanced backside-illuminated CCDs fabricated with this technique show near 100% internal quantum efficiency in the wavelength range of 200 to 900 nm. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.