By Topic

Growth and characterization of Ga0.8In0.2(N)As quantum wells with GaNxAs1-x(x≤0.05) barriers by plasma-assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Govindaraju, Sridhar ; Texas Materials Institute and Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 ; Holmes, Archie L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1477202 

GaInNAs has received significant attention due to the ability to achieve 1300 nm wavelengths on GaAs substrates. In most cases, nitrogen is added directly into the GaInAs quantum wells, which degrades their optical properties. In this work, we investigate how the placement of nitrogen in Ga0.8In0.2As/GaAs heterostructures affects their optical characteristics. The location of nitrogen was studied in three different structures: nitrogen in barriers alone, nitrogen in wells alone, and nitrogen in the wells and barriers. Our results show that placing nitrogen in the barriers instead of wells provides better luminescence properties. We also observed that the addition of a GaAs spacer at the barrier-well interfaces further improves the luminescence properties of the structure. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )