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Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxy

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4 Author(s)
Kohmoto, S. ; The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba 300-2635, Japan ; Nakamura, H. ; Nishikawa, S. ; Asakawa, K.

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Self-organization sites of InAs quantum dots (QDs) are arranged to form three-dimensional (3D) lattices by ultrahigh vacuum in situ processing. In-plane QD arrangement in the 3D lattices is initially defined by site-controlled InAs QD arrays fabricated by a scanning tunneling microscope probe-assisted technique. With the QD arrays used as strain templates, self-organized InAs QDs are vertically aligned by multistacking, resulting in the 3D QD lattices. The photoluminescence from the 3D QD structures is investigated at room temperature. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

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