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High direct energy band gaps determination in InxAl1-xAs coherently grown on InP

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4 Author(s)
Convertino, Annalisa ; Istituto di Chimica dei Materiali C.N.R., Area della Ricerca di Roma, via Salaria Km 29.300, I–00016 Monterotondo St. Roma, Italy ; Padeletti, Giuseppina ; Cerri, Luciana ; Viticoli, Sesto

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1434974 

A series of InxAl1-xAs samples (0.50≪x≪0.56) coherently grown on InP substrates has been investigated in order to study the dependence of the two dimensional excitonic energies associated with the E1 and E11 energy gaps and the spin–orbit splitting parameter Δ1 on InAs molar composition x. The samples have been fabricated by means of molecular beam epitaxy and the energy gaps have been determined by performing normal–incidence reflectivity measurements at room temperature. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan 2002

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