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Ion beam proximity lithography on spherical substrates with continuously scanned, self-complementary masks

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3 Author(s)
Ruchhoeft, P. ; Electrical and Computer Engineering, University of Houston, Texas 77204 ; Wolfe, J.C. ; Bass, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1428273 

This article demonstrates, for the first time, the formation of 1 μm Manhattan geometries on a 3 mm deep spherical substrate subtending a 60° angle. The approach uses ion beam proximity lithography to achieve the large depth-of-field and a self-complementary mask strategy to enable each wafer level to be defined by a single, dimensionally stable mask. This demonstration is a first step toward validating a more general approach that modeling suggests will be capable of patterning 7.5 mm deep substrates with twice the subtended angle. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan 2002

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