Cart (Loading....) | Create Account
Close category search window
 

Fabrication of c-axis oriented ZnO/AlN thin films prepared by radio frequency reactive sputtering and development of ZnO/AlN layered structure surface acoustic wave devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yong, Yoon-Joong ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong-dong 373-1, Yusung-gu, Daejon 305-701, South Korea ; Kang, Youn-Seon ; Lee, Paul S. ; Lee, Jai-Young

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1428279 

ZnO/AlN films have been continuously deposited on silicon wafers by rf reactive magnetron sputtering method. The c-axis preferred orientation of ZnO film with respect to the properties such as crystallinity and interface smoothness of AlN film at bottom has been examined by x-ray diffraction (XRD). The surface acoustic wave (SAW) filters with a wavelength of 52.8 μm using these ZnO/AlN bilayered structure have been fabricated for the first time and their SAW velocities and electromechanical coupling coefficients have been measured by a network analyzer. It is observed that as the thickness of AlN film increases, the average roughness of AlN film increases and the degree of the c-axis preferred orientation of ZnO film reduces. From these results, it is suggested that the factor determining the preferred orientation of top ZnO layer is the surface smoothness of bottom AlN layer. By measuring SAW characteristics of the ZnO/AlN bilayered structure, the phase velocity is calculated to be 4300 m/s and the electromechanical coupling coefficient is 3.23%, which are high enough for commercialization. It is also found that the velocity and the coefficient follow the better one of two films. The SAW filter fabricated in this work reveals good characteristics as the thickness of ZnO film increases and that of AlN film decreases. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.