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Characterization of annealing effects of low temperature chemical vapor deposition oxide films as application of 4H-SiC metal–oxide–semiconductor devices

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2 Author(s)
Won-Ju Cho ; Basic Research Laboratory, Electronics and Telecommunication Research Institute, 161 Kajong-dong, Yusong-gu, Taejon 305-350, Korea ; Kim, Young-cheol

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1426365 

The characteristics of charge trapping and interface states for low temperature chemical vapor deposition (LTCVD) oxide formed on 4H-SiC as carbon-free gate oxide has been studied. Observation of a large flatband voltage shift indicated the presence of many negative oxide charges in the as-deposited LTCVD oxide. Heat treatment was carried out to improve the quality of the LTCVD oxide in various conditions. Interface state density, flatband voltage, and effective oxide charge were decreased with the heat treatment. The heat treatment also greatly improved charge trapping characteristics against electron injection. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan 2002

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