Cart (Loading....) | Create Account
Close category search window

Contact resistance of focused ion beam deposited platinum and tungsten films to silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
DeMarco, Anthony J. ; University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742 ; Melngailis, John

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Focused ion beam (FIB) techniques are currently being used in industry for circuit repair and rewiring in the prototyping stage. The ability to deposit a conductor directly onto silicon with a good electrical contact using the FIB methods would increase the utility of this technique in repair and circuit function diagnosis. In addition, FIB made contacts may be encountered in microelectromechanical devices (MEMS), and, when combined with FIB direct implantation, may permit local fabrication of transistors [e.g., bipolars and junction field-effect transistors (JFETs)] without conventional, planar techniques. The contact resistance of FIB-deposited platinum and tungsten onto variously doped silicon was investigated. FIB-metal contact to n+ and p+Si was found to be ohmic after a sintering at 400 °C for 20 min in H2N2 forming gas. Individual contacts were found to vary widely in contact resistance, likely due to nonuniformity in the deposition process. Contacts to lightly doped Si were nonohmic. The contact resistance for Pt contacts to heavily doped Si was found to be on the order of 10-2 Ω cm2, and the contact resistance for W contacts on the order of 10-3 Ω cm2. It is believed that the sintering leads to formation of Pt2Si and PtSi silicides, which may interfere with the metal/semiconductor tunneling contact. Platinum silicides form around 300 °C, at the metal to silicon interface for the platinum contacts. Tungsten silicide, WSi2, f- - orms at 650 °C and is not believed to play a part in the tungsten contact dynamics. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 6 )

Date of Publication:

Nov 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.