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Contact resistance of focused ion beam deposited platinum and tungsten films to silicon

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2 Author(s)
DeMarco, Anthony J. ; University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742 ; Melngailis, John

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1410094 

Focused ion beam (FIB) techniques are currently being used in industry for circuit repair and rewiring in the prototyping stage. The ability to deposit a conductor directly onto silicon with a good electrical contact using the FIB methods would increase the utility of this technique in repair and circuit function diagnosis. In addition, FIB made contacts may be encountered in microelectromechanical devices (MEMS), and, when combined with FIB direct implantation, may permit local fabrication of transistors [e.g., bipolars and junction field-effect transistors (JFETs)] without conventional, planar techniques. The contact resistance of FIB-deposited platinum and tungsten onto variously doped silicon was investigated. FIB-metal contact to n+ and p+Si was found to be ohmic after a sintering at 400 °C for 20 min in H2N2 forming gas. Individual contacts were found to vary widely in contact resistance, likely due to nonuniformity in the deposition process. Contacts to lightly doped Si were nonohmic. The contact resistance for Pt contacts to heavily doped Si was found to be on the order of 10-2 Ω cm2, and the contact resistance for W contacts on the order of 10-3 Ω cm2. It is believed that the sintering leads to formation of Pt2Si and PtSi silicides, which may interfere with the metal/semiconductor tunneling contact. Platinum silicides form around 300 °C, at the metal to silicon interface for the platinum contacts. Tungsten silicide, WSi2, f- - orms at 650 °C and is not believed to play a part in the tungsten contact dynamics. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 6 )

Date of Publication:

Nov 2001

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