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Performance of the Raith 150 electron-beam lithography system

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3 Author(s)
Goodberlet, James G. ; Research Laboratory of Electronics, Massachusetts Institute of Technology, Room 39-427, Cambridge, Massachusetts 02139 ; Hastings, J.Todd ; Smith, Henry I.

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The performance of a Raith 150 electron-beam lithography system is reported. The system’s resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at low- and high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 μm field was measured to be 15 nm. Pattern-placement accuracy below 35 nm, mean plus twice the standard deviation, was demonstrated. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 6 )