Cart (Loading....) | Create Account
Close category search window
 

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Osawa, Morimi ; Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan ; Takahashi, Kimitoshi ; Sato, M. ; Arimoto, Hiroshi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1410090 

A novel proximity effect correction algorithm using pattern shape modification and the area density map method for electron-beam projection lithography is proposed. This algorithm enables fast, accurate and self-consistent calculation of modified pattern sizes. The correctable minimum feature sizes for shape modification were investigated from two viewpoints, mask fabrication restriction and dose margin. The correctable minimum sizes are mostly determined by the dose margin requirement in the case of isolated and dense repeated patterns, implying that the tool resolution determines correctable minimum sizes. A special technique is required for isolated space patterns where the backscattering energy cannot be reduced by simple sizing. We have implemented an algorithm in which pattern densities at middle parts of large patterns are reduced by using a lines and spaces (L/S) pattern or mesh patterns for that case. Successful correction results down to 60 nm from the simulation and 100 nm from the experiment have been obtained. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 6 )

Date of Publication:

Nov 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.