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In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy

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3 Author(s)
Badano, G. ; Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059 ; Daraselia, M. ; Sivananthan, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1387455 

One of the major drawbacks associated with in situ pyrometry is the fact that the sample emissivity is unknown. Real-time in situ measurements of HgCdTe growth temperature are made even more difficult by the change in emissivity that takes place during deposition. In this article, a Fourier transform infrared spectrometer was utilized to measure simultaneously the sample emission and its emissivity, thereby making it possible to determine the sample temperature at any growth stage. Two different methods of temperature determination from the spectral radiance were compared, and applied to the in situ monitoring of the growth of a HgCdTe/CdTe(211)B/Si(211) heterostructure. A computer simulation of the measuring procedure showed that the technique is very sensitive to signal reduction resulting from beam misalignment and/or imperfect calibration of the detector spectral response. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 4 )

Date of Publication:

Jul 2001

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