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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:19 Issue:4 Help

Molecular beam epitaxy growth and characterization of ZnTe:Cr2+ layers on GaAs(100)

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5 Author(s)
Sadofyev, Yu.G. ; P.N. Lebedev Physical Institute RAS, Moscow 117924, Russia ; Pevtsov, V.F. ; Dianov, E.M. ; Trubenko, P.A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1383075 

The chromium-doped ZnTe layers were grown by molecular beam epitaxy technology on the GaAs substrates. The metallic chromium was used as a dopant. The characteristic emission of the Cr2+ ions that is incorporated into ZnTe epilayers was obtained. However, the attempt of doping by CrI3 has shown that the halides induce a deterioration of the surface morphology and are inefficient dopants for II–VI semiconductors. © 2001 American Vacuum Society.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 4 )

Date of Publication: Jul 2001

Page(s):
1483 - 1487
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.1383075
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2001

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