By Topic

AlN-based film bulk acoustic resonator devices with W/SiO2 multilayers reflector for rf bandpass filter application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kim, Sang-Hee ; School of Electronic Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, Korea ; Kim, Jong-Heon ; Park, Hee-Dae ; Yoon, Giwan

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this article, a reactively sputtered aluminum nitride (AlN) piezoelectric film and its application for a film bulk acoustic resonator (FBAR) device are presented. The FBAR is composed of an AlN film sandwiched between top aluminum (Al) and bottom gold (Au) electrodes and an acoustic reflector block of SiO2/W stacked multilayers. Both the top and bottom electrodes are connected by a transmission line. The insertion loss (S21) and return loss (S11) were 6.1 and 37.19 dB, respectively. Using the empirical definition technique, the series resonance frequency (fs) and parallel resonance frequency (fp) were found to be 1.976 and 2.005 GHz, respectively. Based on these findings, the effective electromechanical coupling coefficient (Keff2) and the quality factor (Q) were also obtained as 3.53% and 4261, respectively. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 4 )