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Modeling arsenic activation and diffusion during furnace and rapid thermal annealing

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3 Author(s)
E. Vandenbossche ; SGS-Thomson Microelectron., Crolles, France ; H. Jaouen ; B. Baccus

A model has been developed for arsenic diffusion after ion implantation and validated for a very wide range of annealing conditions including furnace and rapid thermal annealing (RTA). Transient-enhanced diffusion (TED) and activation are modeled by taking into account the ion implantation damage and clustering kinetics for arsenic. It is shown that for advanced CMOS and BiCMOS technologies the activation of impurities is governed by the rapid annealing steps through the release of charged arsenic defect pairs

Published in:

Electron Devices Meeting, 1995. IEDM '95., International

Date of Conference:

10-13 Dec 1995