By Topic

Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Maeda, T. ; Electrotechnical Laboratory, 1-1-4, Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan ; Kurokawa, A. ; Sakamoto, K. ; Ando, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Atomic structures on active oxidized silicon films by an ozone gas at room temperature are investigated by an atomic force microscopy. A step-terrace structure similar to that on a clean Si (001) prepared by a silicon homoepitaxy is preserved on the ozone oxidized surface. These atomically regulated structures are also discernible on the SiO2/Si interface when a 1.0-nm-thick SiO2 film oxidized by an atmospheric ozone is removed by a diluted HF etching. It is revealed that the homogeneous lateral oxide growth, i.e., layer-by-layer growth, proceeds at room temperature by an active oxidant such as ozone. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 2 )