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Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions

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3 Author(s)
Jager, N.D. ; Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Science, University of California at Berkeley, Berkeley, California 94720 ; Weber, E.R. ; Salmeron, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1350839 

A simple qualitative correlation between the corrugation anisotropy observed in scanning tunneling microscope (STM) images of GaAs(110) surfaces and the symmetry properties of the surface states is presented. We show that as a function of bias, tunneling from different electronic states near high-symmetry points of the surface Brillouin zone gives rise to a distinct corrugation along [11¯0] and [001] in STM images. Existing models of the surface band structure are used to identify these states. We show that at small bias, due to band bending effects, the same surface state near the conduction-band edge determines the image corrugation in both filled and empty states images of n-type GaAs. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 2 )

Date of Publication:

Mar 2001

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