Referenced Items are not available for this document.
Effects of a two-step rapid thermal annealing process on Mg-doped
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A two-step rapid thermal annealing (RTA) process is proposed in order to improve the electrical properties, the crystal quality, and the surface roughness of Mg-doped p-type GaN films. In the two-step RTA process, the first low temperature step (600 °C) with a long annealing time (5 min) was followed by the second high temperature (950 °C) step with a short annealing time. These results show that the two-step RTA process significantly improves electrical properties and reduces the surface roughness of
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:19
,
Issue:
1
)
Date of Publication: Jan 2001
- Page(s):
- 215 - 218
- ISSN :
- 1071-1023
- Digital Object Identifier :
- 10.1116/1.1338554
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jan 2001
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