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Effects of a two-step rapid thermal annealing process on Mg-doped p-type GaN films grown by metalorganic chemical vapor deposition

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5 Author(s)
Ahn, Kwang-Soon ; Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea ; Kim, Dong-Joon ; Moon, Yong-Tae ; Kim, Hyo-Gun
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A two-step rapid thermal annealing (RTA) process is proposed in order to improve the electrical properties, the crystal quality, and the surface roughness of Mg-doped p-type GaN films. In the two-step RTA process, the first low temperature step (600 °C) with a long annealing time (5 min) was followed by the second high temperature (950 °C) step with a short annealing time. These results show that the two-step RTA process significantly improves electrical properties and reduces the surface roughness of p-GaN compared to the one-step RTA process. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 1 )

Date of Publication:

Jan 2001

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