By Topic

Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Kosarev, A.I. ; A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia ; Andronov, A.N. ; Vinogradov, A.J. ; Felter, T.E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effect of material and surface morphology of the back contact on field emission has been studied in carbon films deposited by very high frequency chemical vapor deposition at low temperature. The emission current was measured as a function of applied field for carbon films deposited simultaneously on various substrates coated with metals having different work functions (Ti, Cu, Ni, and Pt). Different metals demonstrated different types of microstructure and surface morphology. Therefore, the effect of back contact morphology was especially studied. The material of the back contact influenced the emission properties, but no direct correlation between emission and the work function of metal was observed. The field emission threshold was found to be affected by the roughness of the back contact: a Ti contact with 270 nm roughness showed emission threshold of Eth=3 Vm, while a contact made of the same material, but with roughness of ∼2.5 nm had Eth=13 Vm. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:19 ,  Issue: 1 )