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Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining

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16 Author(s)
Barth, W. ; Institute of Technological Physics, IMA, University of Kassel, Heinrich-Plett Strausse 40, 34132 Kassel, Germany ; Debski, T. ; Shi, F. ; Hudek, P.
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An electron emission behavior of field emission arrays based on a new bulk/surface silicon micromachining method of fabrication was studied. The process developed is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is enhanced by a 50 nm diamond-like carbon (DLC) film formed by chemical vapor deposition. Detailed Raman, Auger, and transmission electron microscopy (TEM) investigations of the deposited DLC films will be presented. Results about the presence of nanocrystalline diamond obtained with Raman spectroscopy could not be confirmed by the TEM investigations (the nanocrystalline diamond is smaller than 10 nm). © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 6 )

Date of Publication:

Nov 2000

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