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Energy transfer between electrons and photoresist: Its relation to resolution

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2 Author(s)
Han, Geng ; Electrical and Computer Engineering and Center for NanoTechnology, University of Wisconsin, Madison, Wisconsin 53706 ; Cerrina, Franco

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1318188 

In the study of high-energy photon and electron lithography the photoresist has been treated as a uniform and isotropic medium. As dimensions become smaller and exposure fluctuation more noticeable, we cannot ignore the processes that happen at the molecular scale. Hence, it becomes important to understand how the energy is coupled from an exciting radiation to the various molecular components of a photoresist material. In this article, we present the first step in the development of such a model. We base the analysis on the method of virtual quanta for the incoming electron, and use the dielectric function response theory to describe the medium. The results correctly describe the decreasing strength of the interaction on the electron energy, and yield an estimate of ≈2–3 nm for an average interaction distance. A simple Monte Carlo simulation is implemented to verify the effect of the fluctuations due to the virtual quanta on a line edge. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 6 )

Date of Publication:

Nov 2000

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