Cart (Loading....) | Create Account
Close category search window
 

Dry via hole etching of GaAs using high-density Cl2/Ar plasma

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chen, Y.W. ; Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Ooi, B.S. ; Ng, G.I. ; Radhakrishnan, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1289548 

In this article, we report on a high etch rate GaAs via hole processes in an electron cyclotron resonance system using a Cl2/Ar plasma. The effects of process parameters on the GaAs etch rate were investigated. The influences of process parameters on the resultant profiles were also studied. The GaAs etch rate was found to increase as the Cl2 percentage in the Cl2/Ar plasma, process pressure, and rf power or the microwave power increased. A maximum etch rate of 6.7 μm/min has been obtained from a sample etched using a microwave power, rf power, and process pressure of 800 W, 150 W, and 50 mTorr, respectively. The degree of anisotropy of the etched profile was controlled by varying the process pressure and rf power. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 5 )

Date of Publication:

Sep 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.