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Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices

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12 Author(s)
Stangl, J. ; Institut für Halbleiterphysik, Johannes Kepler Universität Linz, Altenbergerstr. 69, A-4040 Linz, Austria ; Roch, T. ; Holy, V. ; Pinczolits, M.
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We have investigated the lateral ordering of dot positions in a SiGe/Si multilayer and, for comparison, in a PbSe/PbEuTe dot superlattice using grazing incidence small-angle scattering. The two samples represent two different approaches to achieve an enhanced ordering of dot positions in semiconductor heterostructures: in the SiGe/Si sample, step bunching in the multilayer grown on a vicinal Si substrate was exploited to reduce the fluctuations in lateral dot distances. In the PbSe/PbEuTe sample the strong elastic anisotropy leads to the formation of a three-dimensional dot “lattice,” exhibiting a very narrow distribution of dot distances. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 4 )