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Spin-dependent resonant tunneling in double-barrier magnetic heterostructures

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3 Author(s)
Petukhov, A.G. ; Physics Department, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701-3995 ; Demchenko, D.O. ; Chantis, A.N.

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Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs,GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTDs) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/GaAs and GaAs/AlAs/GaxMn1-x As/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of RTDs based on these double-barrier structures. In particular, resonant tunneling of holes in the GaxMn1-xAs-based RTDs is considered. Our approach is based on k∙p perturbation theory with exchange splitting effects taken into account. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 4 )