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Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers

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4 Author(s)
Yasuda, T. ; Joint Research Center for Atom Technology (JRCAT), 1-1-4 Higashi, Tsukuba, Ibaraki 305-8562, Japan ; Nishizawa, M. ; Yamasaki, S. ; Tanaka, K.

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This article reports that chemically active sites on SiO2 surfaces can be either passivated or introduced intentionally by treating them in a proper chlorosilane gas, SiHnCl4-n (n=0,1,2). Our experiments of Si chemical vapor deposition on SiO2-covered Si have shown that Si deposition is suppressed on SiCl4- and SiHCl3-treated samples, while an SiH2Cl2 treatment drastically enhances Si nucleation. Thus, the chlorosilane treatment is a unique way for us to control the interface bonds between the SiO2 surface and the Si deposits on it. We also demonstrate resistless selective-area deposition using a SiHCl3-treated ultrathin SiO2 mask layer. Patterns are defined on the mask surface by direct electron-beam irradiation which induces Cl desorption thereby forming chemically reactive surface defects. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 3 )