Laser operation at room temperature of self-organized In_0.1Ga_0.9As/(GaAs)₆(AlAs)₁ quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

In_0.1Ga_0.9As/(GaAs)₆(AlAs)₁ quantum wires (QWRs) were naturally formed in a 3.0-nm- or 4.8-nm-thick In_0.1Ga_0.9As/(GaAs)₆(AlAs)₁ quantum well grown on a (775)B-oriented GaAs substrate by molecular beam epitaxy which has a corrugated AlAs-on-InGaAs upper interface (a period of about 40 nm and a vertical amplitude of about 2 nm) and a flat InGaAs-on-AlAs lower interface. Strong polarization dependence [P≡(I_||-I_⊥)/(I_||+I_⊥)=0.15] of photoluminescence spectrum from the (775)B InGaAs QWR structures (L_w=3.0 nm) was observed at 11 K, indicating their good one dimensionality. Graded index separate confinement heterostructure-type self-organized (775)B In_0.1Ga_0.9As/(GaAs)₆(AlAs)₁QWR lasers were fabricated, and they showed laser oscillation with threshold current densities of 1.7–3.1 kA/cm² and lasing wavelengths of 833–868 nm at room temperature (27 °C) under pulsed current condition. © 2000 American Vacuum Society.