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Electrical properties of modulation-doped InxAl1-xAs/InyGa1-yAs structures on GaAs and InP substrates with 0.2≤x, y≤0.8

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3 Author(s)
Cai, W.Z. ; The Electronic Materials Processing and Research Laboratory, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Wang, Z.M. ; Miller, D.L.

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We have investigated the compositional dependence of surface morphology and electronic properties of modulation-doped InxAl1-xAs/InyGa1-yAs structures (0.2≤x,y≤0.8) on strain-relaxed buffers on GaAs and InP substrates. We have found that modulation-doped In0.70Al0.30As/In0.70Ga0.30As on InP shows a two-dimensional electron-gas mobility of 1.3×104cm2/V s (300 K) and 9.3×104cm2/V s (77 K) at a sheet carrier concentration of 2.0×1012cm-2. We suggest that this material system has a potential for device applications if a high-quality Schottky barrier layer can be fabricated. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 3 )