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High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy

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4 Author(s)
Yang, X. ; Department of Electrical Engineering, Columbia University, New York, New York 10027 ; Heroux, J.B. ; Jurkovic, M.J. ; Wang, W.I.

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1.3 μm InGaAsN:Sb/GaAs quantum well laser diodes (LDs) have been grown by solid source molecular beam epitaxy using Sb as a surfactant. A record low threshold of 1.02 kA/cm2 was achieved for broad area laser diodes under pulsed operation at room temperature. Performance of single quantum well (SQW) and multiple quantum well (MQW) InGaAsN:Sb LDs are compared. While the room temperature threshold and slope efficiency of MQW LDs remain almost the same as those of SQW LDs, the high temperature characteristics of MQW LDs are greatly improved. A record high operating temperature of 105 °C and a high characteristic temperature (T0) of 92 K below 75 °C are achieved for the InGaAsN:Sb/GaAs MQW LD. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 3 )