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Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

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4 Author(s)
Coldren, C.W. ; Solid State and Photonics Laboratory, Stanford University, Via Ortega, Stanford, California 94305 ; Spruytte, S.G. ; Harris, J.S. ; Larson, M.C.

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Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm2 for single and triple quantum well active regions, respectively, and emitted light at 1220–1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm2 and efficiencies of 0.066 W/A. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 3 )