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Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy

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5 Author(s)
Aqariden, F. ; DRS Infrared Technologies, L.P., P. O. Box 740188, Dallas, Texas 75374 ; Shih, H.D. ; Liao, P.-K. ; Duncan, W.M.
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Real-time composition control using spectral (or spectroscopic) ellipsometry (SE) in the growth of long-wavelength infrared (LWIR) Hg1-xCdxTe (x∼0.225) on Cd0.96Zn0.04Te(211) B by molecular beam epitaxy (MBE) was investigated. Excellent compositional reproducibility among the 10 LWIR Hg1-xCdxTe growth runs was demonstrated with the aid of SE, with the average composition being x=0.225 and the standard deviation in x being 0.000 42, the lowest figure that has ever been reported. The ability of MBE to switch from one composition to another on demand and with first pass success using SE is also demonstrated. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 3 )

Date of Publication:

May 2000

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