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Cluster formation during annealing of ultra-low-energy boron-implanted silicon

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11 Author(s)
Collart, E.J.H. ; Applied Implant Division, Horsham, W-Sussex RH13 5PY, England ; Murrell, A.J. ; Foad, M.A. ; van den Berg, J.A.
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The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1×1015 and 5×1015cm-2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 1 )