Cart (Loading....) | Create Account
Close category search window
 

Mechanistic feature-scale profile simulation of SiO2 low-pressure chemical vapor deposition by tetraethoxysilane pyrolysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Labun, Andrew H. ; Compaq Computer Corporation, 334 South Street, Shrewsbury, Massachusetts 01545 ; Moffat, Harry K. ; Cale, Timothy S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.591182 

Simulation of chemical vapor deposition in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE [T. S. Cale, T. H. Gandy, and G. B. Raupp, J. Vac. Sci. Technol. A 9, 524 (1991)] thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for tetraethoxysilane [Si(OC2H5)4] pyrolysis to deposit SiO2, which had been applied successfully to reactor-scale simulation, does not correctly predict the low step coverage over trenches observed under short reactor residence time conditions. One apparent discrepancy between the mechanism and profile-evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products, i.e., the by-product inhibition effect is underpredicted. The cause of the proposed mechanism’s insensitivity to by-product inhibition is investigated with the combined reactor and topography simulators. This is done first by manipulating the surface-to-volume ratio of a simulated reactor and second by adjusting parameters in the proposed mechanism such as the calculated free energies of proposed surface species. The conclusion is that simply calibrating mechanism parameters to enhance the by-product inhibition can improve the fit to profile evolution data; however, the agreement between with reactor-scale data and simulations decreases. Additional surface reaction channels seem to be required to simultaneously reproduce experimental reactor-scale growth rates and feature-scale ste- - p coverages. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.