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High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

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2 Author(s)
Samukawa, S. ; LSI Basic Research Laboratory, Si Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan ; Mukai, T.

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We describe a method for controlling radicals in high-performance SiO2 etching of contact holes smaller than 0.1 μm using nonperfluorocompound gases (CF3I and C2F4) in an ultrahigh-frequency (UHF) plasma. Because this method allows the independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals, both high etching selectivity and a high etching rate were achieved without microloading and etching stop, even for a 0.05 μm contact hole. Using this new gas chemistry, we achieved an optimum balance between polymerization and etching in 0.05-μm-diameter contact holes by controlling the flow ratio of C2F4/CF3I gas © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan 2000

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