Cart (Loading....) | Create Account
Close category search window
 

High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Samukawa, S. ; LSI Basic Research Laboratory, Si Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan ; Mukai, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.591169 

We describe a method for controlling radicals in high-performance SiO2 etching of contact holes smaller than 0.1 μm using nonperfluorocompound gases (CF3I and C2F4) in an ultrahigh-frequency (UHF) plasma. Because this method allows the independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals, both high etching selectivity and a high etching rate were achieved without microloading and etching stop, even for a 0.05 μm contact hole. Using this new gas chemistry, we achieved an optimum balance between polymerization and etching in 0.05-μm-diameter contact holes by controlling the flow ratio of C2F4/CF3I gas © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.