Cart (Loading....) | Create Account
Close category search window
 

Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yanagisawa, Junichi ; Department of Physical Science, Graduate School of Engineering Science and Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan ; Goto, Takayuki ; Hada, Takuo ; Nakai, Masaya
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590985 

Buried Si-doped layers in GaAs were fabricated by low-energy focused Si2+ ion beam (Si FIB) implantation in GaAs grown by molecular beam epitaxy (MBE) and successive overlayer regrowth using an FIB/MBE combined system. Carrier profiles were measured by means of a capacitance–voltage profiling technique. It was found that doped layers with a carrier concentration of 1.2×1012cm-2 and a width (full width at half maximum) of 23 nm were formed without postannealing for the 200 eV Si implantation at a dose of 7×1012cm-2. After postannealing, the doping efficiency was improved and the width became narrower. At a dose of 1.4×1013cm-2, narrower carrier distribution with higher peak density was observed although the total doping efficiency was decreased. In contrast a deeply depleted layer was formed and no carriers were observed for implantations at an energy higher than 400 eV before the postannealing. This may be because damage is significantly reduced for the lower implantation energy. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 6 )

Date of Publication:

Nov 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.