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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

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7 Author(s)
Hussain, T. ; Raytheon Gallium Arsenide Operations, Torrance, California 90505 ; Chu, P. ; Wen, C.P. ; Circle, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.591133 

We report the effect of start epi-material variability on the performance of double-recessed power pseudomorphic high electron mobility transistors. Variation in channel-recess depth, which is related to variation in the start material, is critically linked to rf performance of monolithic microwave and millimeter wave integrated circuit high power amplifiers. For high yield, it is important to control the channel recess, which in turn has implications on acceptable variation in epi-material. Design tweaks can relax channel-recess tolerance limits, but it is still important to account for material variation. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 6 )

Date of Publication:

Nov 1999

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