By Topic

Integration methodology of chemical vapor deposition TiN, chemical vapor deposition W and W chemical mechanical planarization for sub-quarter micron process application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wu, Jun ; Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan, Republic of China ; Wang, Y.L. ; Dun, Jowei ; Wu, Y.L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Chemical vapor deposition (CVD) W plugs have been widely used for device metallization with excellent conformity in small contacts/vias with high aspect ratio [J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides (Noyes, 1991)]. However, some unexpected plug fill such as plug loss and key hole exposing post tungsten chemical mechanical planarization (WCMP) still happened while going to smaller plug size and using metalorganic chemical vapor deposition (MOCVD) TiN barrier. In this study, MOCVD TiN and CVD W fill followed by WCMP for plug metallization were investigated. Extensive analysis had been conducted on various types of defective W plugs. Organic contaminants (hydrocarbon by-products) in MOCVD TiN deposition would prevent W deposition taking place inside the plug. For W wise, lower process temperature, carefully adjusted WF6/SiH4 and WF6/H2 partial pressure ratios had demonstrated better plug fill and electrical performance [T. E. Clark etal, J. Vac. Sci. Technol. B 9, 1478 (1991)]. In the WCMP approach, the effects of different oxidizer concentration in slurry were characterized. Eliminating the seam formation during the CVD W process can help avoid slurry attack in WCMP. The optimized integration scheme of MOCVD TiN barrier, CVD W, and WCMP was successfully achieved and is applied on 0.20 μm Logic production. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 5 )