By Topic

Constraint theory and defect densities at (nanometer SiO2-based dielectric)/Si interfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
1 Author(s)
Phillips, J.C. ; Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974-0636

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590830 

Native SiO2 passivating films grown thermally on flat Si(100) surfaces exhibit many ideal properties that justify regarding them as well-defined (albeit noncrystalline) phases with a continuous and almost defect-free interface with the Si substrate in spite of a large difference in density. Global constraint theory explains this remarkable situation without recourse to elaborate mathematical or geometrical local models, and it correctly predicts the scaling dependence of defect densities in films doped with N and H with essentially no adjustable parameters. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 4 )