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Role of As4 in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study

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4 Author(s)
Yang, H. ; Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 ; LaBella, V.P. ; Bullock, D.W. ; Thibado, P.M.

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The role of As4 molecules in Ga diffusion on the GaAs(001)-(2×4) reconstructed surface has been studied using a combined molecular beam epitaxy and scanning tunneling microscopy multichamber facility. We deposited 10% of a plane of Ga atoms onto an otherwise pristine surface, while exposed to two separate As4 beam equivalent pressures of 10-5 and 10-6 Torr. The higher As4 flux resulted in the production of fewer and larger islands, indicating that increasing the As4 flux increases the total interrogation area available to the Ga atoms before forming islands. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 4 )