Cart (Loading....) | Create Account
Close category search window
 

Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wang, Ching-Wu ; Electronic Engineering Department, I-Shou University, Ta-Hsu Hsiang, Kaohsiung County, Taiwan, Republic of China ; Liao, Jin-Yuan ; Chen, Chih-Liang ; Wen-Kuan Lin
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590786 

The structural and optical properties of rf magnetron-sputtered GaN thin films on p+-Si substrates have been accessed as a function of rapid thermal annealing (RTA) temperatures from 800 to 1000 °C. The evidence has revealed that higher RTA temperatures not only assist the GaN films in recrystallizing into stable hexagonal form but also enhance the near-band-edge emission of GaN films in the photoluminescence spectrum. Moreover, a deep electron trap (Et) with activation energy Ec-Et≅0.39 eV detected at the surface of higher-RTA-temperature-treated GaN films was asserted to be a nitrogen-vacancy-related defect that takes a defect-assisted-tunneling role in the forward conduction process of Au/GaN Schottky diode. The greater reverse leakage current and lower breakdown voltage are suggested to be due to the effects of a lower barrier height and higher ideality factor that occurred in the higher-RTA-temperature-treated samples. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 4 )

Date of Publication:

Jul 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.