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Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometry

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4 Author(s)
Grassi, E. ; Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-7606 ; Johnson, S.R. ; Beaudoin, Mario ; Tsakalis, Kostas S.

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A general procedure to fit optical constants, using a transfer function model with temperature-and/or-composition-dependent coefficients, is presented. The model is further inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The method was applied to fit: (1) the complex index of refraction of the system AlXGa1-xAs at 600 °C, for values of X between 0 and 1. (2) Two data bases of complex dielectric constants, for near-lattice-matched InGaAs and InAlAs, and around temperatures of 500 °C. The parameters of the model are determined with a least squares algorithm with recursive “whitening” of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The level of accuracy achieved makes this method an adequate sensor for temperature, composition, and thickness control during molecular beam epitaxy growth. © 1999 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )