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A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide

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8 Author(s)
Lubyshev, D. ; Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 ; Micovic, M. ; Gratteau, N. ; Cai, W.Z.
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The electrical properties of carbon doped GaAs and AlGaAs were studied as a function of substrate temperature and CBr4 flux for the doping range ∼1018–1020cm-3. Hall measurements indicate a strong reduction in the free carrier concentration of GaAs films grown with the same CBr4 flux at substrate temperatures above 620 °C. Secondary ion mass spectroscopy measurements, however, show no reduction of chemical carbon concentration. The electrical properties of GaAs:C epilayers grown on (n11)A and B surfaces, where n=2–5, show strong dependence on crystallographic orientation. Based on these measurements, the model of free carrier concentration reduction in GaAs:C based on formation of electrically inactive C–C pairs has been proposed. In contrast, no anomalous carbon incorporation in AlGaAs has been detected for the doping range ∼1018–1020cm-3 and the substrate temperature range 550–700 °C. The resulting material exhibits excellent transport and optical properties. © 1999 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )