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Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique

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7 Author(s)
Kang, W.P. ; Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235 ; Wisitsora-at, A. ; Davidson, J.L. ; Howell, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590631 

A diamond field emitter diode array with subvolt turn-on voltage and high emission current is reported. The diamond field emitter diode array with self-align anode was fabricated using a new self-align technique, “self-align-gate-sharpened molding.” The emission current vs anode voltage of the self-align diamond emitter diode shows an extremely low turn-on voltage of 0.7 V, one of the lowest values reported in the field emission literatures. A high emission current of 4 μA at an anode voltage of less than 5 V can be obtained from a 2×2 array of diamond tips. The turn-on voltage is comparable to conventional p-n junction diode. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 2 )

Date of Publication:

Mar 1999

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