By Topic

Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Hahn, Y.B. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Lee, J.W. ; Vawter, G.A. ; Shul, R.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590565 

Reactive ion beam etching (RIBE) of GaAs, GaP, AlGaAs, and GaSb was performed in a Cl2–Ar mixture using an inductively coupled plasma source. The etch rates and yields were strongly affected by ion energy and substrate temperature. The RIBE was dominated by ion-assisted etching at ≪600 eV and by physical sputtering beyond 600 eV. The temperature dependence of the etch rates revealed three different regimes, depending on the substrate temperature: (1) sputtering-etch limited, (2) products-desorption limited, and (3) mass-transfer limited regions. GaSb showed the overall highest etch rates, while GaAs and AlGaAs were etched at the same rates. The etched features showed extremely smooth morphologies with anisotropic sidewalls. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 2 )