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Multilayer technique for fabricating Nb junction circuits exhibiting charging effects

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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590504 

A reliable process has been developed for the fabrication of all Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes, and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single-electron transistor made of 0.3×0.3 μm2 area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 1 )

Date of Publication:

Jan 1999

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